Compound Semiconductors and Crystal Materials
CdZnTe (CdTe) Substrates
Â鶹´«Ã½Ó³» Metals products with their consistently high quality are winning customer acclaim and confidence. We manufacture CdZnTe (CdTe) for II-VI compound semiconductors. We supply products meeting the latest demand and product requirements.
| Product name | CdZnTe (CdTe) (Cadmium Zinc Telluride) Substrates |
|---|---|
| Primary Applications | Infrared detectors, radiation detectors |
Lineup
| ³§¾±³ú±ð£¨³¾³¾£© | Orientation | |
|---|---|---|
| CdZnTe Substrates | 10¡Á10- 95¡Á95 |
£¨111£©,£¨211£© |
- CdTe is also available.
| High resistivity CZT Lineup | ³§¾±³ú±ð£¨³¾³¾£© | Thickness(mm) | ¸é±ð²õ¾±²õ³Ù¾±±¹¾±³Ù²â(¦¸³¦³¾) | ¦Ì¦Ó(³¦³¾2/V) | Standard pixel design |
|---|---|---|---|---|---|
| Bare substrate | Up to 60x60 | 0.5¨C5.0 | 107¨C1011 | Electron: 1x10-4¨C2³æ10-3 Hole: 1x10-5¨C9³æ10-5 |
- |
| Planar detector | Up to 10x10 | - | |||
| Pixel detector | Up to 40x40 | Pixel pitch: 75 ¦Ìm Pixel size: 50 ¦Ìm |
Application Examples
Features
- Large-diameter CdZnTe single crystals of the world¡¯s highest quality are achieved using our proprietary crystal growing technology.
- CdZnTe can detect radiation with higher precision than other materials, for stable X-ray detection.
- Our CdZnTe substrates with uniform Zn concentration enable customers to produce larger infrared sensors.
Features of high-resistance CdZnTe substrates for radiation sensor use
(left: planar device; right: pixel electrodes)
- High resistance reduces dark current.
- Polarization does not occur, thanks to the outstanding stability.
- Excellent interoperability with application-specific integrated circuits (ASIC) is possible.
- Can be supplied as bare substrate or with planar device or pixel electrodes.
Contact Information
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